IXXX110N65B4H1 - IXYS

IXXX110N65B4H1 Diode

XPTTM 650V GenX4TM IXXK110N65B4H1 w/ Sonic Diode IXXX110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = V ≤ CE(sat) tfi(typ) = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C.

Features

z Optimized for 10-30kHz Switching z Square RBSOA z Short Circuit Capability z Anti-Parallel Sonic Diode z High Current Handling Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z High Frequency Power Inverters © 2013 IXYS CORPORATION, All Rights Reserved DS100502B(6/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1.