IXXA30N65C3HV - IXYS

IXXA30N65C3HV 650V IGBTs

Preliminary Technical Information XPTTM 650V IGBT GenX3TM IXXA30N65C3HV Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 650V 30A 2.2V 32ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M.

Features

z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Capability z Short Circuit Capability z High Voltage Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 24A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 650 V 3.0 5.5 V 10 μA 250 μA ±100 nA 1.85 2.30 2.20 V V Applications z Power Inverters .