IXXH100N60B3 - IXYS

IXXH100N60B3 IGBT

XPTTM 600V IGBT GenX3TM IXXH100N60B3 Extreme Light Punch Through IGBT for 10-30 kHz Switching VCES = IC110 = V ≤ CE(sat) tfi(typ) = 600V 100A 1.80V 150ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient .

Features

z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2013 IXYS CORPORATION, All Rights Reserved DS100284B(02/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 70A, VGE = 15V, V.