IXXX100N60C3H1 - IXYS

IXXX100N60C3H1 Diode

Preliminary Technical Information XPTTM 600V GenX3TM w/ Diode IXXK100N60C3H1 IXXX100N60C3H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC90 = V ≤ CE(sat) tfi(typ) = 600V 100A 2.20V 75ns TO-264 (IXXK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test C.

Features

z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z Anti-Parallel Ultra Fast Diode z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts © 2011 IXYS CORPORATION, All Rights Reserved DS100283A(01/11) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg Qge IC = 70A, VGE = 15V, VCE = 0..