IXTT75N10 - IXYS

IXTT75N10 N-Channel MOSFET

MegaMOSTMFET N-Channel Enhancement Mode IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 VDSS 100 V 100 V ID25 67 A 75 A RDS(on) 25 mΩ 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR E VGS VGSM ID25 T IDM PD E TJ TJM L Tstg Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pu.

Features

S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic Rectifier B Symbol Test Conditions O VDSS VGS = 0 V, ID = 250 µA Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 V Applications z DC-DC converters z Synchronous rectification z Battery chargers z Switched-mode and resonant-mode power supplies VGS(th) VDS = VGS, ID = 4 mA 2.0 4V z DC choppers z.