IXTT02N450HV - IXYS

IXTT02N450HV High Voltage Power MOSFET

High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Tempe.

Features

 High Blocking Voltage
 High Voltage Packages Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 High Voltage Power Supplies
 Capacitor Discharge Applications
 Pulse Circuits
 Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100498C(10/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 50mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 500V, ID = 0.5
• ID25 RG = 10 (External) Qg(on) .