PolarHT Power MOSFET TM IXTQ 74N20P IXTT 74N20P VDSS ID25 www.DataSheet4U.com RDS(on) = 200 V = 74 A = 34 mΩ N-Channel Enhancement Mode Avalanche Energy Rated Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, puls.
z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ z z z Easy to mount Space savings High power density VGS = 10 V,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTT75N10 |
IXYS |
N-Channel MOSFET | |
2 | IXTT75N10L2 |
IXYS |
Power MOSFET | |
3 | IXTT75N15 |
IXYS |
High Current Power MOSFET | |
4 | IXTT76P10THV |
IXYS |
Power MOSFET | |
5 | IXTT02N450HV |
IXYS |
High Voltage Power MOSFET | |
6 | IXTT100N25P |
IXYS Corporation |
N-Channel MOSFET | |
7 | IXTT10P50 |
IXYS Corporation |
P-Channel MOSFET | |
8 | IXTT110N10L2 |
IXYS |
Power MOSFET | |
9 | IXTT110N10P |
IXYS Corporation |
N-Channel MOSFET | |
10 | IXTT11P50 |
IXYS Corporation |
P-Channel MOSFET | |
11 | IXTT120N15P |
IXYS |
Power MOSFET | |
12 | IXTT140N075L2HV |
IXYS |
Power MOSFET |