IXTT440N055T2 - IXYS

IXTT440N055T2 Power MOSFET

Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 VDSS ID25 RDS(on) = 55V = 440A ≤ 1.8mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Conti.

Features

z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low R DS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C VGS = 10V, ID = 100A, Notes 1 & 2 Characteristic Values Min. Typ. Max. 55 2.0 4.0 V V z z Easy to Mount Space Sav.