IXTH76N25T - IXYS

IXTH76N25T Power MOSFET

TrenchTM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T VDSS = ID25 = RDS(on)  250V 76A 44m Typical Avalanched BV = 300V TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ.

Features

 Avalanche Rated
 High Current Handling Capability
 Fast Intrinsic Rectifier
 Low RDS(on) Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 DC-DC Converters
 Battery Chargers
 Switch-Mode and Resonant-Mode Power Supplies
 DC Choppers
 AC Motor Drives
 Uninterruptible Power Supplies
 High Speed Power Switching Applications © 2015 IXYS CORPORATION, All Rights Reserved DS99663G(11/15) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 10V, ID = 0.5
• ID25, Note 1 43 72 S Ciss Coss Crss VG.