isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 33mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor .
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 33mΩ(Max)
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switch-Mode and Resonant-Mode Power Supplies
·DC-DC Converters
·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
72
A
IDM
Drain Current-Single Plused
288
A
PD
Total Dissipation @TC=25℃
400
W
Tj
Max. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTH75N10 |
IXYS Corporation |
N-Channel MOSFET | |
2 | IXTH75N10 |
INCHANGE |
N-Channel MOSFET | |
3 | IXTH75N10L2 |
INCHANGE |
N-Channel MOSFET | |
4 | IXTH75N10L2 |
IXYS |
Power MOSFET | |
5 | IXTH75N15 |
IXYS |
High Current Power MOSFET | |
6 | IXTH75N15 |
INCHANGE |
N-Channel MOSFET | |
7 | IXTH76N25T |
IXYS |
Power MOSFET | |
8 | IXTH76N25T |
INCHANGE |
N-Channel MOSFET | |
9 | IXTH76P10T |
IXYS |
Power MOSFET | |
10 | IXTH7P50 |
IXYS Corporation |
P-Channel MOSFET | |
11 | IXTH02N250 |
IXYS |
High Voltage Power MOSFETs | |
12 | IXTH02N450HV |
IXYS |
High Voltage Power MOSFET |