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High Voltage Power MOSFETs Preliminary Technical Information IXTH03N400 IXTV03N400S VDSS = ID25 = ≤RDS(on) 4000V 300mA 290Ω N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC .
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH02N250 |
IXYS |
High Voltage Power MOSFETs |
|
| 2 | IXTH02N450HV |
IXYS |
High Voltage Power MOSFET |
|
| 3 | IXTH102N15T |
IXYS |
Power MOSFET |
|
| 4 | IXTH102N15T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTH102N20T |
IXYS |
Power MOSFET |
|
| 6 | IXTH102N20T |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTH10N100 |
IXYS Corporation |
MOSFET |
|
| 8 | IXTH10P50 |
IXYS Corporation |
P-Channel MOSFET |
|
| 9 | IXTH110N10L2 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IXTH110N10L2 |
IXYS |
Power MOSFET |
|
| 11 | IXTH11N80 |
IXYS |
MegaMOS FET |
|
| 12 | IXTH11N80 |
INCHANGE |
N-Channel MOSFET |
|