IXTH76P10T - IXYS

IXTH76P10T Power MOSFET

TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25.

Features

 International Standard Packages
 Avalanche Rated
 Extended FBSOA
 Fast Intrinsic Diode
 Low RDS(ON) and QG Advantages
 Easy to Mount
 Space Savings Applications
 High-Side Switching
 Push Pull Amplifiers
 DC Choppers
 Automatic Test Equipment
 Current Regulators
 Battery Charger Applications DS100024C(9/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = -10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.5
• VDSS, ID = 0.5
• ID25 RG = 1 (External) Qg(.