IXTH7P50 - IXYS Corporation

IXTH7P50 P-Channel MOSFET

VDSS ID25 RDS(on) Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 7P50 IXTH 8P50 -500V -7 A 1.5 Ω -500V -8 A 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC.

Features

• International standard package
• Low R HDMOS process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) TM DS (on) JEDEC TO-247 AD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 6
• Low package inductance (<5 nH) - easy to drive and to protect rated Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA Applications VDSS VGS(th) IGSS IDSS RDS(on) V GS = 0 V, ID = -.