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IXTH64N10L2 |
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| Part Number | IXTH64N10L2 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 64 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 357 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Tem... |
| Document |
 IXTH64N10L2 Data Sheet
PDF 334.72KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXTH64N10L2 |
IXYS |
Power MOSFET |
|
| 2 | IXTH64N65X |
IXYS |
Power MOSFET |
|
| 3 | IXTH64N65X |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTH60N15 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTH60N15 |
IXYS |
Power MOSFET |
|