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IXTH10P50 |
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| Part Number | IXTH10P50 |
| Manufacturer | IXYS Corporation |
| Description | Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR ... |
| Features |
z z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. -500 0.054 -3.0 -0.122 ± 100 TJ = 25 ° C TJ = 125 ° C -200 -1 -5.0 V %/K V %/K nA µA mA
z
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th) Temperature Coefficient V GS = ±20 VDC, VDS = 0 V DS = 0.8 • VDSS V GS = 0 V V G... |
| Document |
 IXTH10P50 Data Sheet
PDF 123.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTH102N15T |
IXYS |
Power MOSFET |
|
| 2 | IXTH102N15T |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXTH102N20T |
IXYS |
Power MOSFET |
|
| 4 | IXTH102N20T |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTH10N100 |
IXYS Corporation |
MOSFET |
|