IXGK50N50BU1 - IXYS Corporation

IXGK50N50BU1 HiPerFAST IGBT

HiPerFASTTM IGBT with Diode www.datasheet4u.com V CES I C25 V CE(sat) 2.3 V 2.5 V t fi 100ns 120ns IXGK 50N50BU1 IXGK 50N60BU1 500 V 75 A 600 V 75 A Combi Pack Preliminary data Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped .

Features

W °C °C °C Nm/lb.in. g °C q q q -55 ... +150 150 -55 ... +150 Mounting torque (M4) 0.9/6 10 300 q q q Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 50N50 50N60.