IXGK50N60B - IXYS Corporation

IXGK50N60B (IXGx50N60B) HiPerFAST IGBT

HiPerFASTTM IGBT IXGH IXGK IXGT IXGJ 50N60B 50N60B 50N60B 50N60B VCES IC25 VCE(sat) tfi(typ) = 120 TO-247 AD (IXGH) = 600 = 75 = 2.3 V A V ns www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load TC.

Features

• International standard packages
• High frequency IGBT
• Latest generation HDMOSTM process
• High current handling capability
• MOS Gate turn-on - drive simplicity Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies Advantages
• Easy to mount with 1 screw (insulated mounting screw hole)
• Switching speed for high frequency applications
• High power density 95585F(12/02) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250µA, VGE = 0 V = 250 µA, VCE = VGE VCE = 0.8
• VCES VGE = 0 V VCE.