IXGK50N60B2D1 - IXYS

IXGK50N60B2D1 IGBT

Advance Technical Data HiPerFASTTM IGBT with Diode IXGK 50N60B2D1 IXGX 50N60B2D1 B2-Class High Speed IGBTs V CES IC25 VCE(sat) t fi(typ) = 600 V = 75 A = 2.0 V = 65 ns Symbol Test Conditions VCES V CGR VGES VGEM TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C .

Features

• High frequency IGBT and anti-parallel FRED in one package
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications
• Switch-mode and resonant-mode power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives Advantages
• Space savings (two devices in one package)
• Easy to mount with 1 screw © 2004 IXYS All rights reserved DS99146A(03/04) Symbol g fs C ies Coes Cres Qg Qge Qgc t d(on) t ri t d(off) tfi Eoff td(on) tri E on td(off.