IXGK28N140B3H1 - IXYS Corporation

IXGK28N140B3H1 GenX3 1400V IGBT Diode

www.DataSheet.co.kr GenX3TM 1400V IGBTs w/ Diode Avalanche Rated IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 VCES = 1400V IC110 = 28A VCE(sat) ≤ 3.60V TO-247 (IXGH) G C E Tab Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Conti.

Features

z PLUS247 (IXGX) G C E Tab TO-264 (IXGK) TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C G C E Tab E = Emitter Tab = Collector Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (IXGH & IXGK) Mounting Force (IXGX) TO-247 & PLUS247 TO-264 300 260 1.13/10 20..120/4.5..27 6 10 z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Avalanche Rated Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th.