IXGK50N50BU1 |
Part Number | IXGK50N50BU1 |
Manufacturer | IXYS Corporation |
Description | HiPerFASTTM IGBT with Diode www.datasheet4u.com V CES I C25 V CE(sat) 2.3 V 2.5 V t fi 100ns 120ns IXGK 50N50BU1 IXGK 50N60BU1 500 V 75 A 600 V 75 A Combi Pack Preliminary data Symbol Test C... |
Features |
W °C °C °C Nm/lb.in. g °C
q q q
-55 ... +150 150 -55 ... +150 Mounting torque (M4) 0.9/6 10 300
q
q q
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
International standard package JEDEC TO-264 AA High frequency IGBT and antiparallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 50N50 50N60... |
Document |
IXGK50N50BU1 Data Sheet
PDF 166.08KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IXGK50N60A2D1 |
IXYS Corporation |
IGBT | |
2 | IXGK50N60AU1 |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGK50N60B |
IXYS Corporation |
(IXGx50N60B) HiPerFAST IGBT | |
4 | IXGK50N60B2D1 |
IXYS |
IGBT | |
5 | IXGK50N60BU1 |
IXYS Corporation |
HiPerFAST IGBT |