www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.8 V = 100 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1.
z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V z z z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH60N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT | |
2 | IXGH60N60C2 |
IXYS Corporation |
HiPerFASTTM IGBT C2-Class High Speed IGBTs | |
3 | IXGH60N60C3 |
IXYS Corporation |
High Speed PT IGBT | |
4 | IXGH60N50 |
IXYS Corporation |
(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT | |
5 | IXGH6N170 |
IXYS |
High Voltage IGBT | |
6 | IXGH6N170A |
IXYS Corporation |
High Voltage IGBT | |
7 | IXGH10N170 |
IXYS |
High Voltage IGBT | |
8 | IXGH10N170A |
IXYS |
High Voltage IGBT | |
9 | IXGH10N300 |
IXYS Corporation |
High Voltage IGBT | |
10 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
11 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
12 | IXGH12N100AU1 |
IXYS Corporation |
IGBT |