www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by lea.
z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C TJ = 125°C 2.1 1.8 2.5 V µA mA nA z z z z z VGE(th) ICES IGES VCE(sat) IC = 250 µA, VCE = VGE PFC circuits Uninterruptible power supplies (UPS) Switched-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH60N60C3 |
IXYS Corporation |
High Speed PT IGBT | |
2 | IXGH60N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT | |
3 | IXGH60N60B2 |
IXYS Corporation |
IGBT | |
4 | IXGH60N50 |
IXYS Corporation |
(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT | |
5 | IXGH6N170 |
IXYS |
High Voltage IGBT | |
6 | IXGH6N170A |
IXYS Corporation |
High Voltage IGBT | |
7 | IXGH10N170 |
IXYS |
High Voltage IGBT | |
8 | IXGH10N170A |
IXYS |
High Voltage IGBT | |
9 | IXGH10N300 |
IXYS Corporation |
High Voltage IGBT | |
10 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
11 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
12 | IXGH12N100AU1 |
IXYS Corporation |
IGBT |