www.DataSheet4U.com Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 6 A = 7.0 V = 32 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V.
z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor discharge & pulser circuits z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 Note 1 TJ = 25°C TJ = 125°C V V µA µA nA V V BVCES VGE(.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH6N170 |
IXYS |
High Voltage IGBT | |
2 | IXGH60N50 |
IXYS Corporation |
(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT | |
3 | IXGH60N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT | |
4 | IXGH60N60B2 |
IXYS Corporation |
IGBT | |
5 | IXGH60N60C2 |
IXYS Corporation |
HiPerFASTTM IGBT C2-Class High Speed IGBTs | |
6 | IXGH60N60C3 |
IXYS Corporation |
High Speed PT IGBT | |
7 | IXGH10N170 |
IXYS |
High Voltage IGBT | |
8 | IXGH10N170A |
IXYS |
High Voltage IGBT | |
9 | IXGH10N300 |
IXYS Corporation |
High Voltage IGBT | |
10 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
11 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
12 | IXGH12N100AU1 |
IXYS Corporation |
IGBT |