Advance Technical Information High Voltage IGBT IXGH10N300 VCES = 3000V = 10A IC90 VCE(sat) ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Test Conditions TJ = 25°C to 1.
High Peak Current Capability Low Saturation Voltage Low Gate Drive Requirement Molding Epoxies Meet UL 94 V-0 Flammability Classification
G C E (TAB)
G = Gate E = Emitter
C = Collector TAB = Collector
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C
Characteristic Values Min. Typ. Max. 3000 3.0 5.0 25 500 ±100 3.5 5.2 V V μA μA nA V V
Advantages High Power Density Easy to Mount
VCE = 0.8
• VCES, VGE= 0V VCE = 0V, VGE = ±20V IC IC = 10A, VGE = 15V = 30A
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH10N170 |
IXYS |
High Voltage IGBT | |
2 | IXGH10N170A |
IXYS |
High Voltage IGBT | |
3 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
4 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
5 | IXGH12N100AU1 |
IXYS Corporation |
IGBT | |
6 | IXGH12N100U1 |
IXYS Corporation |
IGBT | |
7 | IXGH12N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
8 | IXGH12N60B |
IXYS Corporation |
HiPerFAST IGBT | |
9 | IXGH12N60BD1 |
IXYS Corporation |
HiPerFAST IGBT | |
10 | IXGH12N60C |
IXYS |
IGBT | |
11 | IXGH12N60CD1 |
IXYS Corporation |
IGBT | |
12 | IXGH12N90C |
IXYS Corporation |
HiPerFAST IGBT Lightspeed Series |