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IXGH60N60B2 |
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| Part Number | IXGH60N60B2 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 ... |
| Features |
z
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD
1.13/10 Nm/lb.in. 6 4 g g
z z z
Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
Applications
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V
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z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, ... |
| Document |
 IXGH60N60B2 Data Sheet
PDF 605.25KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXGH60N60 |
IXYS Corporation |
Ultra-Low VCE(sat) IGBT |
|
| 2 | IXGH60N60C2 |
IXYS Corporation |
HiPerFASTTM IGBT C2-Class High Speed IGBTs |
|
| 3 | IXGH60N60C3 |
IXYS Corporation |
High Speed PT IGBT |
|
| 4 | IXGH60N50 |
IXYS Corporation |
(IXGH60N50 / IXGH60N60) HIGH CURRENT MOSIGBT |
|
| 5 | IXGH6N170 |
IXYS |
High Voltage IGBT |
|