www.DataSheet4U.com Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C VCES = 900 V = 24 A IC25 VCES(sat) = 3.0 V tfi(typ) = 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 .
• Very high frequency IGBT
• New generation HDMOSTM process
• International standard package JEDEC TO-247
• High peak current handling capability
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 100 1.5 ±100 3.0 V V mA mA nA V Advantages
• Fast switching speed
• High power density
•
•
•
• PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies
• High power audio am.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH12N100AU1 |
IXYS Corporation |
IGBT | |
2 | IXGH12N100U1 |
IXYS Corporation |
IGBT | |
3 | IXGH12N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
4 | IXGH12N60B |
IXYS Corporation |
HiPerFAST IGBT | |
5 | IXGH12N60BD1 |
IXYS Corporation |
HiPerFAST IGBT | |
6 | IXGH12N60C |
IXYS |
IGBT | |
7 | IXGH12N60CD1 |
IXYS Corporation |
IGBT | |
8 | IXGH10N170 |
IXYS |
High Voltage IGBT | |
9 | IXGH10N170A |
IXYS |
High Voltage IGBT | |
10 | IXGH10N300 |
IXYS Corporation |
High Voltage IGBT | |
11 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT | |
12 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT |