Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GES VGEM I C25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µ.
• Very high frequency IGBT
• New generation HDMOSTM process
• Internationalstandardpackage
JEDEC TO-247
• High peak current handling capability
Symbol
BVCES VGE(th.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXGH12N60B |
IXYS Corporation |
HiPerFAST IGBT |
|
| 2 | IXGH12N60BD1 |
IXYS Corporation |
HiPerFAST IGBT |
|
| 3 | IXGH12N60CD1 |
IXYS Corporation |
IGBT |
|
| 4 | IXGH12N100AU1 |
IXYS Corporation |
IGBT |
|
| 5 | IXGH12N100U1 |
IXYS Corporation |
IGBT |
|
| 6 | IXGH12N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs |
|
| 7 | IXGH12N90C |
IXYS Corporation |
HiPerFAST IGBT Lightspeed Series |
|
| 8 | IXGH10N170 |
IXYS |
High Voltage IGBT |
|
| 9 | IXGH10N170A |
IXYS |
High Voltage IGBT |
|
| 10 | IXGH10N300 |
IXYS Corporation |
High Voltage IGBT |
|
| 11 | IXGH10N60 |
IXYS Corporation |
(IXGx10N60x) High speed IGBT |
|
| 12 | IXGH10N60A |
IXYS Corporation |
(IXGx10N60x) High speed IGBT |
|