IXGH12N60BD1 - IXYS Corporation

IXGH12N60BD1 HiPerFAST IGBT

www.DataSheet4U.com HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE(sat) tfi(typ) Preliminary data = 600 V = 24 A = 2.1 V = 120 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125.

Features

• Moderate frequency IGBT
• New generation HDMOSTM process
• International standard package JEDEC TO-247
• High peak current handling capability and antiparallel diode in one package Applications
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• PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1.5 ±100 2.1 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 mA, VGE = 0 V = 250 mA, VGE = VGE VCE = 0.8
• VCES VGE = 0 V VCE = 0 V, V.