IXGH12N60CD1 - IXYS Corporation

IXGH12N60CD1 IGBT

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped i.

Features

l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Very high frequency IGBT New generation HDMOSTM process International standard package JEDEC TO-247AD High peak current handling capability Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1.5 ± 100 2.1 2.7 V V µA mA nA V Applications l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VGE = VGE l l VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V l PFC circuit AC mot.