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Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N60P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight 50/60 Hz, RMS, 1 minute Mounting force ISOPLUS247 Test Conditions TJ = 25°C to 150°C .
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT , Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ± 200 25 1000 105 V V nA μA μA mΩ z Easy to moun.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFR64N50P |
IXYS |
Power MOSFET |
|
| 2 | IXFR64N50Q3 |
IXYS |
Power MOSFET |
|
| 3 | IXFR66N50Q2 |
IXYS |
HiPerFET Power MOSFETs Q-Class |
|
| 4 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 5 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET |
|
| 6 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 7 | IXFR10N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
|
| 8 | IXFR120N20 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 |
|
| 9 | IXFR120N25P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|
| 10 | IXFR12N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 11 | IXFR12N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
|
| 12 | IXFR140N20P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|