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IXFR64N60P |
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| Part Number | IXFR64N60P |
| Manufacturer | IXYS |
| Description | Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N60P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDS... |
| Features |
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages
z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT , Note 1 TJ = 125°C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 ± 200 25 1000 105 V V nA μA μA mΩ
z
Easy to moun... |
| Document |
 IXFR64N60P Data Sheet
PDF 146.91KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IXFR64N50P |
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| 4 | IXFR100N25 |
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