Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 RDS(on) 1.05 W 1.20 W 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150.
ISOPLUS 247TM
VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight
G
D
Isolated back surface
* D = Drain
G = Gate S = Source
* Patent pending
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
3 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET | |
4 | IXFR120N20 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 | |
5 | IXFR120N25P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
6 | IXFR12N100F |
IXYS Corporation |
HiPerFET Power MOSFETs | |
7 | IXFR12N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances | |
8 | IXFR140N20P |
IXYS |
PolarHT HiPerFET Power MOSFET | |
9 | IXFR14N100Q2 |
IXYS |
HiPerFET Power MOSFET | |
10 | IXFR14N80 |
IXYS |
Power MOSFET | |
11 | IXFR150N15 |
IXYS |
Power MOSFET | |
12 | IXFR15N100Q3 |
IXYS |
Power MOSFET |