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Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFR 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode VDSS ID25 RDS(on) trr = = = ≤ 300 V 60 A 36 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Con.
z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force 300 2500 22..130/5..29 5 Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 36 V V nA µA µA mΩ VGS = 10 V, ID = 51 A.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 2 | IXFR10N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 3 | IXFR10N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
|
| 4 | IXFR120N20 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 |
|
| 5 | IXFR120N25P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|
| 6 | IXFR12N100F |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 7 | IXFR12N100Q |
IXYS Corporation |
N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances |
|
| 8 | IXFR140N20P |
IXYS |
PolarHT HiPerFET Power MOSFET |
|
| 9 | IXFR14N100Q2 |
IXYS |
HiPerFET Power MOSFET |
|
| 10 | IXFR14N80 |
IXYS |
Power MOSFET |
|
| 11 | IXFR150N15 |
IXYS |
Power MOSFET |
|
| 12 | IXFR15N100Q3 |
IXYS |
Power MOSFET |
|