IXFR64N50Q3 - IXYS

IXFR64N50Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFR64N50Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V T.

Features

 Silicon Chip on Direct-Copper Bond (DCB) Substrate
 Isolated Mounting Surface
 Low Intrinsic Gate Resistance
 2500V~ Electrical Isolation
 Fast Intrinsic Rectifier
 Avalanche Rated
 Low Package Inductance Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 DC-DC Converters
 Battery Chargers
 Switch-Mode and Resonant-Mode Power Supplies
 DC Choppers
 Temperature and Lighting Controls © 2019 IXYS CORPORATION, All Rights Reserved DS100347A(12/19) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 32A, Note 1 Ciss Coss C.