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www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25.
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.0 V ±100 nA TJ = 25°C TJ = 125°C 50 µA 1 mA 3.0 Ω Applications z DC-DC converters z z z z Battery chargers Switched-mode and resonant-mode power supplies DC choppers.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFR40N50Q2 |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 2 | IXFR40N90P |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXFR44N50P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS247 |
|
| 4 | IXFR44N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
|
| 5 | IXFR44N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
|
| 6 | IXFR44N60 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 |
|
| 7 | IXFR44N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET |
|
| 8 | IXFR48N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
|
| 9 | IXFR48N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class |
|
| 10 | IXFR48N60P |
IXYS |
Power MOSFET |
|
| 11 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs |
|
| 12 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET |
|