Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 48N60P ISOPLUS247TM N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 600 V = 32 A ≤ 160 mΩ ≤ 250 ns www.DataSheet4U.com (Electrically Isolated Back Surface) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD Test Conditions TJ = 25°C to 150.
z TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL FC Weight 50/60 Hz, RMS, 1 minute Mounting Force International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode z z z Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFR48N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class | |
2 | IXFR48N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class | |
3 | IXFR40N50Q2 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
4 | IXFR40N90P |
IXYS Corporation |
Power MOSFET | |
5 | IXFR44N50P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET ISOPLUS247 | |
6 | IXFR44N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class | |
7 | IXFR44N50Q |
IXYS Corporation |
HiPerFET Power MOSFETs ISOPLUS247 Q-Class | |
8 | IXFR44N60 |
IXYS Corporation |
HiPerFETTM Power MOSFETs ISOPLUS247 | |
9 | IXFR44N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
10 | IXFR4N100Q |
IXYS Corporation |
HiPerFET Power MOSFETs | |
11 | IXFR100N25 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
12 | IXFR102N30P |
IXYS |
Polar HiPerFET Power MOSFET |