IXFR44N60 - IXYS Corporation

IXFR44N60 HiPerFETTM Power MOSFETs ISOPLUS247

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 44N60 VDSS = 600 V ID25 = 38 A RDS(on) = 130 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Not.

Features

W °C °C °C °C V~ g
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier Applications 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 130 mW VDSS VGS(th) IG.