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IXFR4N100Q |
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| Part Number | IXFR4N100Q |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol VDSS VDGR VGS VGSM ID... |
| Features |
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF)
z z z
Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS) z Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.0 V ±100 nA TJ = 25°C TJ = 125°C 50 µA 1 mA 3.0 Ω Applications z DC-DC converters
z z z z
Battery chargers Switched-mode and resonant-mode power supplies DC choppers... |
| Document |
 IXFR4N100Q Data Sheet
PDF 107.29KB |
| Distributor | Stock | Price | Buy |
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| 1 | IXFR40N50Q2 |
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| 2 | IXFR40N90P |
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| 3 | IXFR44N50P |
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| 4 | IXFR44N50Q |
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