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isc N-Channel MOSFET Transistor IXFP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMU.
·Static drain-source on-resistance:
RDS(on) ≤ 9.1mΩ@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
130
IDM
Drain Current-Single Pulsed
350
PD
Total Dissipation @TC=25℃
360
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~1.
IXFP130N10T - IXYS Corporation
Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFP130N10T2 |
IXYS Corporation |
Power MOSFET |
|
| 2 | IXFP130N10T2 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXFP130N15X3 |
IXYS |
Power MOSFET |
|
| 4 | IXFP130N15X3 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXFP102N15T |
IXYS Corporation |
Power MOSFET |
|
| 6 | IXFP102N15T |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXFP10N60P |
IXYS Corporation |
Polar MOSFETs |
|
| 8 | IXFP10N80P |
IXYS Corporation |
Power MOSFET |
|
| 9 | IXFP110N15T2 |
IXYS Corporation |
Power MOSFET |
|
| 10 | IXFP110N15T2 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXFP12N50P |
IXYS Corporation |
Polar MOSFETs |
|
| 12 | IXFP12N50PM |
IXYS Corporation |
Power MOSFET |
|