IXFP130N10T2 - IXYS Corporation

IXFP130N10T2 Power MOSFET

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA130N10T2 IXFP130N10T2 Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V.

Features

 International Standard Packages
 175°C Operating Temperature
 High Current Handling Capability
 Fast Intrinsic Rectifier
 Dynamic dV/dt Rated
 Low R DS(on) Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 DC-DC Converters
 Battery Charges
 Switch-Mode and Resonant-Mode Power Supplies
 DC Choppers
 AC Motor Drives
 Uninterruptible Power Supplies
 High Speed Power Switching Applications © 2018 IXYS CORPORATION, All Rights Reserved DS100111B(11/18) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 Ciss .