IXFP12N50PM - IXYS Corporation

IXFP12N50PM Power MOSFET

PolarTM Power MOSFET HiPerFETTM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP12N50PM VDSS ID25 trr RDS(on) = 500V = 6A ≤ 500mΩ ≤ 300ns OVERMOLDED TO-220 (IXFP...M) OUTLINE Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to.

Features

Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect G Isolated Tab D S D = Drain G = Gate S = Source 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque 300 260 1.13/10 2.5 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 6A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 V V Advant.