IXFP130N10T |
Part Number | IXFP130N10T |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IXFP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L... |
Features |
·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~1... |
Document |
IXFP130N10T Data Sheet
PDF 246.79KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IXFP130N10T |
IXYS Corporation |
Power MOSFET | |
2 | IXFP130N10T2 |
IXYS Corporation |
Power MOSFET | |
3 | IXFP130N10T2 |
INCHANGE |
N-Channel MOSFET | |
4 | IXFP130N15X3 |
IXYS |
Power MOSFET | |
5 | IXFP130N15X3 |
INCHANGE |
N-Channel MOSFET |