X3-Class HiPerFETTM Power MOSFET IXFP130N15X3 IXFH130N15X3 N-Channel Enhancement Mode Avalanche Rated D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, .
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2019 IXYS CORPORATION, All Rights Reserved
DS100808D(11/19)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
RGi
Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Ener.
isc N-Channel MOSFET Transistor IXFP130N15X3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0mΩ@VGS=10V ·Fu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFP130N10T |
IXYS Corporation |
Power MOSFET | |
2 | IXFP130N10T |
INCHANGE |
N-Channel MOSFET | |
3 | IXFP130N10T2 |
IXYS Corporation |
Power MOSFET | |
4 | IXFP130N10T2 |
INCHANGE |
N-Channel MOSFET | |
5 | IXFP102N15T |
IXYS Corporation |
Power MOSFET | |
6 | IXFP102N15T |
INCHANGE |
N-Channel MOSFET | |
7 | IXFP10N60P |
IXYS Corporation |
Polar MOSFETs | |
8 | IXFP10N80P |
IXYS Corporation |
Power MOSFET | |
9 | IXFP110N15T2 |
IXYS Corporation |
Power MOSFET | |
10 | IXFP110N15T2 |
INCHANGE |
N-Channel MOSFET | |
11 | IXFP12N50P |
IXYS Corporation |
Polar MOSFETs | |
12 | IXFP12N50PM |
IXYS Corporation |
Power MOSFET |