IXFN75N50 - IXYS Corporation

IXFN75N50 (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 mΩ 55 mΩ 500 V 500 V S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continu.

Features

• International standard packages
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
• Low package inductance
• Fast intrinsic Rectifier Applications
• DC-DC converters Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 80N50 75N50 4 ± 200 100 2 50 55 V V nA µA mA mΩ mΩ
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