IXFN73N30Q - IXYS Corporation

IXFN73N30Q HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C .

Features

• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive -faster switching
• Unclamped Inductive Switching (UIS) rated
• Low RDS (on)
• Fast intrinsic diode
• International standard package
• miniBLOC with Aluminium nitride isolation for low thermal resistance
• Low terminal inductance (<10 nH) and stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0 flammability classification Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls Advantages
• Easy to mou.