IXFN70N60Q2 - IXYS Corporation

IXFN70N60Q2 Power MOSFET

HiPerFETTM Power MOSFET Q2-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net IXFN70N60Q2 VDSS = 600V ID25 = 70A RDS(on) ≤ 88mΩ ≤ 250ns trr miniBLOC, SOT-227 B E153432 Test Conditions TJ = 25°C to 150°C TJ = 25.

Features

z S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source z z z z Mounting Torque Terminal Connection Torque Double Metal Process for Low Gate Resistance miniBLOC, with Aluminium Nitride Isolation Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Applications z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±200 50 3 88 V .