IXFN72N55Q2 - IXYS Corporation

IXFN72N55Q2 Power MOSFET

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet IXFN 72N55Q2 VDSS = 550 V ID25 = 72 A RDS(on)= 72 mΩ ≤ 250 ns trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net Test Conditions TJ = 25°C to 15.

Features

•Double metal process for low gate resistance
•miniBLOC, with Aluminium nitride isolation
•Unclamped Inductive Switching (UIS) rated
•Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VISOL Md 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque 2500 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
•Fast intrinsic Rectifier Applications
• DC-DC converters Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.5 5.0 V V
• Switched-mode powe.