IXFN44N80 - IXYS Corporation

IXFN44N80 Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.DataSheet4U.net IXFN 44N80 VDSS ID25 RDS(on) = 800 V = 44 A = 0.165 W D G S S Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC.

Features

• International standard packages isolation • miniBLOC, with Aluminium nitride • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters rated 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s 2500 3000 Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.0 ± 200 TJ = 25°C TJ = 125°C 100 2 0.165 V V nA mA mA W .