IXFN40N110P - IXYS Corporation

IXFN40N110P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN40N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 34A 260mΩ 300ns Test Conditions TJ = 25°C to 150°C .

Features

• International standard package
• Encapsulating epoxy meets UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS) t = 1min t = 1s rated
• Low package inductance Mounting torque Terminal connection torque - easy to drive and to protect Advantages
• Easy to mount
• Space savings
• High power density Weight Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 20A,.