IXFN44N60 - IXYS Corporation

IXFN44N60 HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient.

Features

• International standard package
• miniBLOC, with Aluminium nitride
•
•
•
•
• isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 2 130 V V nA mA mA mW
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies .